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PTVA120501EA - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle 60 55 50 45 40 35 30 18 70 Efficiency 60 Output Power 50 40 1200 MHz 30 1300 MHz 20 1400 MHz 10 a120501ea_g1-1 22 26 30 34 3.

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Datasheet Details

Part number PTVA120501EA
Manufacturer Infineon
File Size 517.79 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA120501EA Datasheet
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Full PDF Text Transcription

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PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
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