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2ED21091S06F - 650V half bridge gate driver

Infineon

The 2ED21091S06F by Infineon is a 650V half bridge gate driver. Below is the official datasheet preview.

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2ED21091S06F 650V half bridge gate driver by Infineon - Datasheet Preview — Official preview page of the 2ED21091S06F 650V half bridge gate driver datasheet (Infineon).

Datasheet Details

Part number	2ED21091S06F
Manufacturer	Infineon
File Size	778.59 KB
Description	650V half bridge gate driver
Datasheet	2ED21091S06F-Infineon.pdf
Additional preview pages of the 2ED21091S06F datasheet.

2ED21091S06F Product details

Description

The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent.

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Published: Sep 26, 2024 |