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2ED21064S06J, 2ED2106S06F - 650V high-side and low-side gate driver

The 2ED21064S06J by Infineon is a 650V high-side and low-side gate driver. Below is the official datasheet preview.

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Official preview page of the 2ED21064S06J 650V high-side and low-side gate driver datasheet (Infineon).

Datasheet Details

Part number 2ED21064S06J, 2ED2106S06F
Manufacturer Infineon
File Size 1.09 MB
Description 650V high-side and low-side gate driver
Datasheet download datasheet 2ED2106S06F-Infineon.pdf
Note This datasheet PDF includes multiple part numbers: 2ED21064S06J, 2ED2106S06F.
Please refer to the document for exact specifications by model.
Additional preview pages of the 2ED21064S06J datasheet.

2ED21064S06J Product details

Description

Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages.There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature

Features

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