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2ED21094S06J - 650V half bridge gate driver

Download the 2ED21094S06J datasheet PDF (2ED2109S06F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v half bridge gate driver.

Description

The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2ED2109S06F-Infineon.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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2ED2109 (4) S06F (J) 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675 V  Integrated ultra-fast, low resistance bootstrap diode  Logic operational up to –11 V on VS Pin  Negative voltage tolerance on inputs of –5 V  Independent under voltage lockout for both channels  Schmitt trigger inputs with hysteresis  3.
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