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2ED21091S06F
2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
Features
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • Logic operational up to –11 V on VS Pin • Negative voltage tolerance on inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.3 V, 5 V and 15 V input logic compatible • Maximum supply voltage of 25 V • Interlocking function with internal 540 ns dead time and
programmable up to 2.
2ED21091S06F Datasheet
