2ED2104S06F
Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient voltage immunity of -100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) up to + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to
- 11 V on VS Pin
- Negative voltage tolerance on inputs of
- 5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic patible
- Maximum supply voltage of 25 V
- Shutdown input turns off both channels
- DSO-8 package
- Ro HS pliant
Product summary
VS_OFFSET = 650 V max Io+pk / Io-pk (typ.) = 290 m A / 700 m A VCC = 10 V to 20 V Delay matching = 10 ns max. Propagation delay = 90 ns
Package
DSO-8
Potential applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon remendations are as below:
- Motor drives,...
