2ED2104S06F Datasheet (Infineon) - 650V half bridge gate driver

2ED2104S06F, 650V half bridge gate driver

The 2ED2104S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels.

Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to -

2ED2104S06F Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient voltage immunity of -100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) up to + 650 V

* Maximum bootstrap voltage (VB node) of + 675