2ED2106S06F - 650V high-side and low-side gate driver

Infineon

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Datasheet Details

Part number	2ED2106S06F
Manufacturer	Infineon
File Size	1.09 MB
Description	650V high-side and low-side gate driver
Datasheet	2ED2106S06F-Infineon.pdf

2ED2106S06F Product details

Description

Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages.There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature

Features

Product summary.
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent under voltage lock.

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Published: May 20, 2025 |