Datasheet4U.com

2ED2109S06F - 650V half bridge gate driver

Infineon

The 2ED2109S06F by Infineon is a 650V half bridge gate driver. Below is the official datasheet preview.

📥 Download Datasheet

2ED2109S06F 650V half bridge gate driver by Infineon - Datasheet Preview — Official preview page of the 2ED2109S06F 650V half bridge gate driver datasheet (Infineon).

Datasheet Details

Part number	2ED2109S06F
Manufacturer	Infineon
File Size	1.28 MB
Description	650V half bridge gate driver
Datasheet	2ED2109S06F-Infineon.pdf
Additional preview pages of the 2ED2109S06F datasheet.

2ED2109S06F Product details

Description

The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent under voltage lockout for both chann.

📁 2ED2109S06F Similar Datasheet

2ED020I12-F - Dual IGBT Driver (eupec GmbH)
2ED300C17 - Dual IGBT Driver (Eupec)
2EDL1S - Power Entry Module (Tyco)
2EDL1SC - Power Entry Module (Tyco)
2EDL1SCM - Power Entry Module (Tyco)
2EDL1SM - Power Entry Module (Tyco)
2EDL4 - Power Entry Module (Tyco)
2EDL4C - Power Entry Module (Tyco)

Other Datasheets by Infineon

2ED21091S06F - 650V half bridge gate driver
2ED21094S06J - 650V half bridge gate driver
2ED2104S06F - 650V half bridge gate driver
2ED21064S06J - 650V high-side and low-side gate driver
2ED2106S06F - 650V high-side and low-side gate driver
2ED21084S06J - 650V half bridge gate driver

Published: Apr 10, 2020 |