GT43 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High DC Current Gain : hFE= 2000(Min. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: GT43
Manufacturer: Inchange Semiconductor
File Size: 195.79 KB
Datasheet: GT43-InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Switching for dynamotor excitation
* General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB

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GT43 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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