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IXTQ102N15T - Power MOSFET

Download the IXTQ102N15T datasheet PDF. This datasheet also covers the IXTA102N15T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages z Avalanche Rated Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA102N15T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ102N15T N-Channel MOSFET INCHANGE
IXTQ102N20T N-Channel MOSFET INCHANGE
IXTQ100N25P N-Channel MOSFET IXYS Corporation
IXTQ110N055P PolarHT Power MOSFET IXYS Corporation
IXTQ110N055P N-ChannelMOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ102N20T Power MOSFET
IXTQ10P50P Power MOSFET
IXTQ120N15P Power MOSFET
IXTQ120N20P PolarHT Power MOSFET
IXTQ130N15T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP) VDSS = ID25 = RDS(on) ≤ 150V 102A 18mΩ TO-3P (IXTQ) G S (TAB) GD S (TAB) G DS (TAB) G D S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient Maximum Ratings 150 V 150 V ± 20 V ± 30 V TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C 102 A 75 A 300 A 51 A 750 mJ IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C 10 455 -55 ... +175 175 -55 ... +175 V/ns W °C °C °C 1.6mm (0.062 in.
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