IXTA3N120HV - High Voltage Power MOSFET

IXYS

IXTA3N120HV Description

High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv.

IXTA3N120HV Features

* High Voltage Package
* Fast Intrinsic Diode
* Avalanche Rated
* Molding Epoxies meet UL 94 V-0 Flammability Classification
* High Blocking Voltage Advantages
* Easy to Mount
* Space Savings

IXTA3N120HV Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS100524B(5/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, V

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Datasheet Details

Part number: IXTA3N120HV
Manufacturer: IXYS
File Size: 152.21 KB
Datasheet: IXTA3N120HV-IXYS.pdf
Description: High Voltage Power MOSFET

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High Voltage Power MOSFET IXYS

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IXTA3N120HV Stock/Price