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IXTA300N04T2 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IXTA300N04T2
Manufacturer
INCHANGE
File Size
251.14 KB
Datasheet
IXTA300N04T2-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 300 IDM Drain Current-Single Pulsed 900 PD Total Dissipation @TC=25℃ 480 Tj Operating Junction Temperature -55~175 Tstg Storage Te

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