Datasheet Specifications
- Part number
- IXTA3N110
- Manufacturer
- IXYS Corporation
- File Size
- 175.61 KB
- Datasheet
- IXTA3N110_IXYSCorporation.pdf
- Description
- (IXTx3N1x0) High Voltage Power MOSFETs
Description
www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o.
Features
* l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb. in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) MoldiIXTA3N110 Distributors
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