Datasheet Details
- Part number
- IXTA3N110
- Manufacturer
- IXYS Corporation
- File Size
- 175.61 KB
- Datasheet
- IXTA3N110_IXYSCorporation.pdf
- Description
- (IXTx3N1x0) High Voltage Power MOSFETs
IXTA3N110 Description
www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o.
IXTA3N110 Features
* l l l
G
DS
TO-263 (IXTA)
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263
300
1.13/10 Nm/lb. in. 4 2 g g
l
International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Moldi
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