Description
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM I.
Features
* International Standard Packages
* High Voltage Package
* Fast Intrinsic Diode
* Avalanche Rated
* Molding Epoxies meet UL 94 V-0
Flammability Classification
* High Blocking Voltage
Advantages
* Easy to Mount
* Space Savings
Applications
* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
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DS98844F(0515)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5
* ID25, Note 1
Ciss Coss Crss
VGS = 0V, VD