Datasheet Details
- Part number
- IXTA32N20T
- Manufacturer
- INCHANGE
- File Size
- 250.87 KB
- Datasheet
- IXTA32N20T-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTA32N20T Description
isc N-Channel MOSFET Transistor IXTA32N20T *.
IXTA32N20T Features
* Static drain-source on-resistance:
RDS(on) ≤ 78mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTA32N20T Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
32
IDM
Drain Current-Single Pulsed
64
PD
Total Dissipation @TC=25℃
200
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Tem
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