Datasheet4U Logo Datasheet4U.com

IXTQ160N075T - Power MOSFET

Download the IXTQ160N075T datasheet PDF. This datasheet also covers the IXTH160N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH160N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ160N075T N-ChannelMOSFET INCHANGE
IXTQ160N085T Power MOSFET IXYS
IXTQ160N085T N-ChannelMOSFET INCHANGE
IXTQ160N10T N-ChannelMOSFET INCHANGE
IXTQ16N50P PolarHV Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ160N10T Power MOSFET
IXTQ100N25P N-Channel MOSFET
IXTQ110N055P PolarHT Power MOSFET
IXTQ110N10P N-Channel MOSFET
IXTQ130N10T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.
Published: |