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IXGT31N60 - Ultra-Low VCE(sat) IGBT

Download the IXGT31N60 datasheet PDF. This datasheet also covers the IXGH31N60 variant, as both devices belong to the same ultra-low vce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard package.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH31N60_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ultra-Low VCE(sat) IGBT IXGH 31N60 IXGT 31N60 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 31 80 ICM = 62 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g TO-247 AD G C E (TAB) TO-268 G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.13/10 Nm/lb.in.
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