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IXFB82N60Q3 - Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	IXFB82N60Q3
Manufacturer	IXYS Corporation
File Size	658.31 KB
Description	Power MOSFET
Datasheet	IXFB82N60Q3_IXYSCorporation.pdf

IXFB82N60Q3 Product details

Features

Low Intrinsic Gate Resistance.
Low Package Inductance.
Fast Intrinsic Rectifier.
Low R and Q DS(on) G Advantages.
High Power Density.
Easy to Mount.
Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.5.

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Published: Feb 22, 2012 |