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IXFB72N55Q2 Datasheet - IXYS

IXFB72N55Q2 Power MOSFET

HiPerFETTM Power MOSFETs Q-Class IXFB 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet VDSS = 550 V ID25 = 72 A RDS(on)= 72 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TTCC = = 25°C, 25°C pulse width limited by TJM TTCC = 2.

IXFB72N55Q2 Features

* z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers z Pulsegener

IXFB72N55Q2 Datasheet (551.38 KB)

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Datasheet Details

Part number:

IXFB72N55Q2

Manufacturer:

IXYS

File Size:

551.38 KB

Description:

Power mosfet.

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IXFB72N55Q2 Power MOSFET IXYS

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