IXFB132N50P3 Datasheet (IXYS Corporation) - Polar3 HiPerFET Power MOSFET

IXFB132N50P3, Polar3 HiPerFET Power MOSFET

Advance Technical Information Polar3TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFB132N50P3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 132A 39mΩ 250ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM

IXFB132N50P3 Features

* Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG z z z z Easy to Mount Space Savings Applications z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS =