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IXFB44N100P - Power MOSFET

Features

  • Unclamped Inductive Switching (UIS) Rated.
  • Low Package Inductance.
  • Easy to Drive and to Protect.
  • N-Channel Enhancement Mode.
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(on) and QG Advantages:.
  • Plus 264TM Package for Clip or Spring Mounting.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXFB44N100P 1000 V, 220 mΩ PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode MOSFET Datasheet Pinout Diagram (PLUS TO-264) Tab D G S GD S G: Gate; D: Drain; S: Emitter; Tab: Drain Features: ■ Unclamped Inductive Switching (UIS) Rated ■ Low Package Inductance ■ Easy to Drive and to Protect ■ N-Channel Enhancement Mode ■ Fast Intrinsic Rectifier ■ Avalanche Rated ■ Low RDS(on) and QG Advantages: ■ Plus 264TM Package for Clip or Spring Mounting ■ Space Savings ■ High Power Density Applications: ■ Switched-Mode and Resonant-Mode Power Supplies ■ DC-DC Converters ■ Laser Drivers ■ AC and DC Motor Controls ■ Robotics and Servo Controls Product Summary Characteristic VDSS ID25 RDS(on) trr Value 1000 44 220 300 Unit V A Ω ns © 2023 Littelfuse, Inc.
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