IXFB110N60P3 - Power MOSFET

Features

Avalanche Rated.
Low Package Inductance.
Fast Intrinsic Rectifier.
Low RDS(on) and QG Advantages.
Easy to Mount.
Space Savings.

IXYS Corporation

Datasheet Details

Part number	IXFB110N60P3
Manufacturer	IXYS Corporation
File Size	143.92 KB
Description	Power MOSFET
Datasheet	IXFB110N60P3 Datasheet
Additional preview pages of the IXFB110N60P3 datasheet.

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Full PDF Text Transcription

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Polar3TM HiPerFETTM Power MOSFET IXFB110N60P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 110 275 55 3 35 1890 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 30..120/6.7..

Published: May 30, 2011 |