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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB44N100P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS
dV/dt
PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
44
A
110
A
22
A
2
J
15
V/ns
1250
W
-55 ... +150 150
-55 ... +150 300 260
30..120/6.7..27
°C °C °C °C °C N/lb.
IXFB44N100P Datasheet
