IXFB110N60P3 Datasheet (IXYS Corporation)

IXFB110N60P3, Power MOSFET

Polar3TM HiPerFETTM Power MOSFET IXFB110N60P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 110 275 55 3 35 1890 -55 +150 150 -55 +150 A A A

IXFB110N60P3 Features

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterrupted Power Suppli