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IXFB170N30P - Polar Power MOSFET HiPerFET

IXYS Corporation

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Datasheet Details

Part number	IXFB170N30P
Manufacturer	IXYS Corporation
File Size	145.46 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFB170N30P_IXYSCorporation.pdf

IXFB170N30P Product details

Features

Fast intrinsic diode.
Avalanche Rated.
Unclamped Inductive Switching (UIS) rated.
Very low Rth results high power dissipation.
Low RDS(ON) and QG.
Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V Characteristic Values Min. Typ. Max. 300.

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Published: May 30, 2011 |