IXFB82N60P - PolarHV HiPerFET Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFB82N60P
Manufacturer	IXYS Corporation
File Size	118.09 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFB82N60P_IXYSCorporation.pdf

z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip or spring Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 V.

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Published: May 30, 2011 |