IXFB62N80Q3 Datasheet - IXYS Corporation

IXFB62N80Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 62 180 62 5 50 1560 -55 +150 150 -55 +150 A .

IXFB62N80Q3 Features

* Low Intrinsic Gate Resistance

* Low Package Inductance

* Avalanche Rated

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V

IXFB62N80Q3 Datasheet (659.69 KB)

IXFB62N80Q3 Datasheet Preview — Preview of IXFB62N80Q3 PDF

Datasheet Details

Part number:

IXFB62N80Q3

Manufacturer:

IXYS Corporation

File Size:

659.69 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFB60N80P Power MOSFET (IXYS Corporation)

IXFB100N50P Power MOSFET (IXYS Corporation)

IXFB100N50Q3 HiperFET Power MOSFET Q3-Class (IXYS Corporation)

IXFB110N60P3 Power MOSFET (IXYS Corporation)

IXFB120N50P2 PolarP2 HiPerFET Power MOSFET (IXYS Corporation)

IXFB132N50P3 Polar3 HiPerFET Power MOSFET (IXYS Corporation)

IXFB150N65X2 Power MOSFET (IXYS)

IXFB170N30P Polar Power MOSFET HiPerFET (IXYS Corporation)

TAGS

IXFB62N80Q3 Power MOSFET IXYS Corporation

IXFB62N80Q3 Distributor