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IXFB62N80Q3 - Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	IXFB62N80Q3
Manufacturer	IXYS Corporation
File Size	659.69 KB
Description	Power MOSFET
Datasheet	IXFB62N80Q3_IXYSCorporation.pdf

IXFB62N80Q3 Product details

Features

Low Intrinsic Gate Resistance.
Low Package Inductance.
Avalanche Rated.
Fast Intrinsic Rectifier.
Low RDS(on) and QG Advantages.
High Power Density.
Easy to Mount.
Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = 0.8.
VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values M.

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Published: Feb 22, 2012 |