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IXFB52N90P - Polar Power MOSFET HiPerFET

IXYS Corporation

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Datasheet Details

Part number	IXFB52N90P
Manufacturer	IXYS Corporation
File Size	139.44 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFB52N90P_IXYSCorporation.pdf

IXFB52N90P Product details

Features

z z z G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z z Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 V V.

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Published: Nov 7, 2010 |