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BD177 NPN Transistor

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Description

isc Silicon NPN Power Transistor BD177 .
DC Current Gain- : hFE= 40-250(Min)@ IC= 0. Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min). Complement to type BD178.

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Datasheet Specifications

Part number
BD177
Manufacturer
INCHANGE
File Size
207.24 KB
Datasheet
BD177-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector C

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