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BD176 PNP Transistor

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Description

isc Silicon PNP Power Transistor BD176 .
DC Current Gain- : hFE= 40-250(Min)@ IC= -0. Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min). Complement to type BD175.

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Datasheet Specifications

Part number
BD176
Manufacturer
INCHANGE
File Size
209.13 KB
Datasheet
BD176-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collect

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