BD159 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD159 .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min). DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: BD159
Manufacturer: INCHANGE
File Size: 201.83 KB
Datasheet: BD159-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 375 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Col

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BD159 NPN Transistor INCHANGE

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