BD158 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD158 .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min). DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA. Minimum Lot-to-Lo.

📥 Download Datasheet

BD158 Datasheet Preview — Preview of BD158 PDF

Datasheet Specifications

Part number: BD158
Manufacturer: INCHANGE
File Size: 201.81 KB
Datasheet: BD158-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 325 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Col

BD158 Distributors

📁 Related Datasheet

BD157 BD159 BD159G BD15FD0WFP2-E2 BD15FD0WHFP-TR BD15GA3WEFJ

📌 All Tags

BD158 NPN Transistor INCHANGE

INCHANGE BD158-like datasheet