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HY57V28420BLT, HY57V28420BT 4Banks x 8M x 4bits Synchronous DRAM

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Description

HY57V28420B(L)T 4Banks x 8M x 4bits Synchronous DRAM .
Preliminary The Hynix HY57V28420B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large.

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This datasheet PDF includes multiple part numbers: HY57V28420BLT, HY57V28420BT. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HY57V28420BLT, HY57V28420BT
Manufacturer
Hynix
File Size
279.68 KB
Datasheet
HY57V28420BT_Hynix.pdf
Description
4Banks x 8M x 4bits Synchronous DRAM
Note
This datasheet PDF includes multiple part numbers: HY57V28420BLT, HY57V28420BT.
Please refer to the document for exact specifications by model.

Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation

Applications

* which require large memory density and high bandwidth. HY57V28420B(L)T is organized as 4banks of 8,388,608x4. HY57V28420B(L)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

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