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HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM

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Description

HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM .
The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and.

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Datasheet Specifications

Part number
HY57V281620A
Manufacturer
Hynix Semiconductor
File Size
81.40 KB
Datasheet
HY57V281620A_HynixSemiconductor.pdf
Description
4 Banks x 2M x 16bits Synchronous DRAM

Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch - 1, 2, 4, 8 or Full page for Sequential Burst
* All inputs and outputs referenced to positive edge of system clock

Applications

* which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16 H Y 5 7 V 2 8 1 6 2 0 A i s o f f e r i n g f u l l y s y n c h r o n o u s o p e r a t i o n r e f e r e n c e d t o a p o s i t i v e e d g e o f t h e c l o c k . A l l i n p

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