HY57V281620ELT Synchronous DRAM Memory

Hynix Semiconductor

Description

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.1.0 1.1 First Ve.
and is subject to change without notice.

📥 Download Datasheet

HY57V281620ELT Datasheet Preview — Preview of HY57V281620ELT PDF

Datasheet Specifications

Part number: HY57V281620ELT
Manufacturer: Hynix Semiconductor
File Size: 120.33 KB
Datasheet: HY57V281620ELT_HynixSemiconductor.pdf
Description: Synchronous DRAM Memory

Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

Applications

* which require wide data I/O and high bandwidth. HY57V281620E(L)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620E(L)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input

HY57V281620ELT Distributors

📁 Related Datasheet

HY57V28420BLT HY57V28420BT HY57V561620BLT-H HY57V641620FTP HY57V641620LTP HY57V641620STP

📌 All Tags

HY57V281620ELT Synchronous DRAM Memory Hynix Semiconductor

Hynix Semiconductor HY57V281620ELT-like datasheet