HY57V641620STP Description
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No.0.1 History Initi.HY57V641620STP Features
* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQMHY57V641620STP Applications
* which require wide data I/O and high bandwidth. HY57V641620F(L/S)TP is organized as 4banks of 1,048,576x16. HY57V641620F(L/S)TP is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The dat
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