Datasheet Specifications
- Part number
- HY57V641620ET
- Manufacturer
- Hynix Semiconductor
- File Size
- 144.66 KB
- Datasheet
- HY57V641620ET_HynixSemiconductor.pdf
- Description
- 4-Bank x 1M x 16-Bits SDRAM
Description
m o c .64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .D w w w 4Bank x 1M x 16bits Synchronous .
Features
* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQMApplications
* which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. TheHY57V641620ET Distributors
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