Datasheet Specifications
- Part number
- HY57V64420HG
- Manufacturer
- Hynix Semiconductor
- File Size
- 170.38 KB
- Datasheet
- HY57V64420HG_HynixSemiconductor.pdf
- Description
- 4 Banks x 4M x 4Bit Synchronous DRAM
Description
www.DataSheet4U.com HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM .
Features
* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operationApplications
* which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4. HY57V644020HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data pathsHY57V64420HG Distributors
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