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HY57V281620ELTP, HY57V281620ELT Synchronous DRAM Memory 128Mbit (8M x 16bit)

HY57V281620ELTP Description

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.History 1.0 .
and is subject to change without notice.

HY57V281620ELTP Features

* Voltage: VDD, VDDQ 3.3V supply voltage
* 4096 Refresh cycles / 64ms
* All device pins are compatible with LVTTL interface
* Programmable Burst Length and Burst Type
* 54 Pin TSOPII (Lead or Lead Free Package) - 1, 2, 4, 8 or full page for Sequential Burs

HY57V281620ELTP Applications

* which require wide data I/O and high bandwidth. HY57V281620E(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620E(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock i

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This datasheet PDF includes multiple part numbers: HY57V281620ELTP, HY57V281620ELT. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HY57V281620ELTP, HY57V281620ELT
Manufacturer
Hynix Semiconductor
File Size
120.33 KB
Datasheet
HY57V281620ELT_HynixSemiconductor.pdf
Description
Synchronous DRAM Memory 128Mbit (8M x 16bit)
Note
This datasheet PDF includes multiple part numbers: HY57V281620ELTP, HY57V281620ELT.
Please refer to the document for exact specifications by model.

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Synchronous DRAM Memory 128Mbit 16bit Hynix Semiconductor
Hynix Semiconductor HY57V281620ELTP-like datasheet