HY57V281620HST, HY57V281620HCT - (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

Name: HY57V281620HST
SKU: HY57V281620HST-542423

Hynix Semiconductor

📥 Download Datasheet

HY57V281620HST Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V281620HST, HY57V281620HCT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HY57V281620HST, HY57V281620HCT
Manufacturer	Hynix Semiconductor
File Size	262.25 KB
Description	(HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM
Datasheet	HY57V281620HCT_HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY57V281620HST, HY57V281620HCT. Please refer to the document for exact specifications by model.

HY57V281620HST Product details

Description

The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
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Other Datasheets by Hynix Semiconductor

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Published: Apr 19, 2006 |