HY57V281620HST, HY57V281620HCT Datasheet - Hynix Semiconductor

HY57V281620HST (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation refer.

HY57V281620HST Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati

HY57V281620HCT_HynixSemiconductor.pdf

HY57V281620HST Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V281620HST, HY57V281620HCT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HY57V281620HST, HY57V281620HCT

Manufacturer:

Hynix Semiconductor

File Size:

262.25 KB

Description:

(hy57v281620hc(l/s)t) 4 banks x 2m x 16-bits sdram.

Note:

This datasheet PDF includes multiple part numbers: HY57V281620HST, HY57V281620HCT.
Please refer to the document for exact specifications by model.

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TAGS

HY57V281620HST HY57V281620HCT HY57V281620HCL Banks 16-Bits SDRAM Hynix Semiconductor

HY57V281620HST Distributor