HY57V121620T - Synchronous DRAM

Name: HY57V121620T
SKU: HY57V121620T-572576

Hynix Semiconductor

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Datasheet Details

Part number	HY57V121620T
Manufacturer	Hynix Semiconductor
File Size	186.66 KB
Description	Synchronous DRAM
Datasheet	HY57V121620T_HynixSemiconductor.pdf

HY57V121620T Product details

Description

The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1,.

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Other Datasheets by Hynix Semiconductor

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Published: Feb 22, 2007 |