HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor

HY57V161610D Datasheet Preview — Preview of HY57V161610D PDF

Datasheet Details

Part number	HY57V161610D
Manufacturer	Hynix Semiconductor
File Size	73.20 KB
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Datasheet	HY57V161610D_HynixSemiconductor.pdf

HY57V161610D Product details

Description

THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range.

Features

Single 3.0V to 3.6V power supply Note1).
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch.
All inputs and outputs referenced to positive edge of system clock - 1, 2, 4 and 8 for Interleave Burst.
Programmable C.

📁 HY57V161610D Similar Datasheet

HY57V28420BLT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V28420BT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V561620BLT-H - DRAM (Pioneer)
HY57V641620FTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620LTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620STP - Synchronous DRAM Memory 64Mbit (Hynix)
HY5-P - Current Transducers HY 5 to 25-P (LEM)
HY50-P - Current Transducer HY 50-P (LEM)

Other Datasheets by Hynix Semiconductor

HY57V161610D-I - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610E - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-I - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ETP-I - 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610FT-5 - 16Mb Synchronous DRAM
HY57V161610FT-5I - 16Mb Synchronous DRAM

Published: Apr 2, 2005 |