HY57V161610D-I 2 Banks x 512K x 16 Bit Synchronous DRAM

Hynix Semiconductor

Description

HY57V161610D-I 2 Banks x 512K x 16 Bit Synchronous DRAM .
THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and.

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Datasheet Specifications

Part number: HY57V161610D-I
Manufacturer: Hynix Semiconductor
File Size: 161.62 KB
Datasheet: HY57V161610D-I-HynixSemiconductor.pdf
Description: 2 Banks x 512K x 16 Bit Synchronous DRAM

Features

* Single 3.0V to 3.6V power supplyNote1)
* Auto refresh and self refresh
* All device pins are compatible with LVTTL interface
* 4096 refresh cycles / 64ms
* JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch
* All inputs and outputs refer

Applications

* which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

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HY57V161610D-I Banks 512K Bit Synchronous DRAM Hynix Semiconductor

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