HY57V121620LT, HY57V121620T - Synchronous DRAM

Name: HY57V121620LT
SKU: HY57V121620LT-572577

Hynix Semiconductor

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HY57V121620LT Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V121620LT, HY57V121620T. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HY57V121620LT, HY57V121620T
Manufacturer	Hynix Semiconductor
File Size	186.66 KB
Description	Synchronous DRAM
Datasheet	HY57V121620T_HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY57V121620LT, HY57V121620T. Please refer to the document for exact specifications by model.

HY57V121620LT Product details

Description

The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1,.

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Other Datasheets by Hynix Semiconductor

HY57V121620T - Synchronous DRAM
HY57V1616010 - (HY57V16x010) 16M SDRAM
HY57V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM
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Published: Feb 22, 2007 |