CS1N70A3H-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS1N70A3H-G Datasheet Preview — Preview of CS1N70A3H-G PDF

Datasheet Details

Part number	CS1N70A3H-G
Manufacturer	Huajing Microelectronics
File Size	445.26 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N70A3H-G-HuajingMicroelectronics.pdf

CS1N70A3H-G Product details

Description

VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 13 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:4.1nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |