HBC327, HBC327_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBC327 PNP EPITAXIAL PLANAR TRANSISTOR

HBC327 Features

* High DC Current Gain: 100-600 at IC=100mA,VCE=1V

* Complementary to HBC337 TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C)

Datasheet Details

HBC327, HBC327_Hi

Hi-Sincerity Mocroelectronics

52.12 KB

Pnp epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HBC327, HBC327_Hi.
Please refer to the document for exact specifications by model.

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