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HBC327, HBC327_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HBC327 Description

HI-SINCERITY MICROELECTRONICS CORP.HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page.
This HBC327 is designed for driver and output-stages of audio amplifiers. High DC Current Gain: 100-600 at IC=100mA,VCE=1V.

HBC327 Features

* High DC Current Gain: 100-600 at IC=100mA,VCE=1V
* Complementary to HBC337 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBC327, HBC327_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBC327, HBC327_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
52.12 KB
Datasheet
HBC327_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC327, HBC327_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBC327-like datasheet