HBC237, HBC237_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6446-B Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No.: 1/4 HBC237 NPN EPITAXIAL PLAN.
The HBC237 is primarily intended for in driver stage of audio amplifiers.

📥 Download Datasheet

HBC237 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBC237, HBC237_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HBC237, HBC237_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 39.69 KB
Datasheet: HBC237_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBC237, HBC237_Hi.
Please refer to the document for exact specifications by model.

Features

* High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW
* Maximum Voltages and Currents (Ta=25°C) VCES

HBC237 Distributors

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HBC237_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HBC237-like datasheet