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HBC237, HBC237_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HBC237 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6446-B Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No.: 1/4 HBC237 NPN EPITAXIAL PLAN.
The HBC237 is primarily intended for in driver stage of audio amplifiers.

HBC237 Features

* High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW
* Maximum Voltages and Currents (Ta=25°C) VCES

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBC237, HBC237_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBC237, HBC237_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
39.69 KB
Datasheet
HBC237_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC237, HBC237_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBC237-like datasheet