HBC556, HBC556_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBC556 PNP EPITAXIAL PLANAR TRANSISTOR

HBC556 Features

* High Breakdown Voltage: 65V at IC=1mA

* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Diss

Datasheet Details

HBC556, HBC556_Hi

Hi-Sincerity Mocroelectronics

47.06 KB

Pnp epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HBC556, HBC556_Hi.
Please refer to the document for exact specifications by model.

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