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HBC557 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBC557 datasheet PDF. This datasheet also covers the HBC557_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HBC557 is designed for use in driver stage of audio amplifier applications.

Features

  • High Breakdown Voltage: 45V.
  • High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC557_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC557
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.91 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC557 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBC556 PNP EPITAXIAL PLANAR TRANSISTOR
HBC558 PNP EPITAXIAL PLANAR TRANSISTOR
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR
HBC547 NPN EPITAXIAL PLANAR TRANSISTOR
HBC548 NPN EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBC557 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6423 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 Description The HBC557 is designed for use in driver stage of audio amplifier applications. Features • High Breakdown Voltage: 45V • High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................
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