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HBC557, HBC557_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HBC557 Description

HI-SINCERITY MICROELECTRONICS CORP.HBC557 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6423 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page.
The HBC557 is designed for use in driver stage of audio amplifier applications. High Breakdown Voltage: 45V. High AC Curr.

HBC557 Features

* High Breakdown Voltage: 45V
* High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 m

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBC557, HBC557_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBC557, HBC557_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
46.91 KB
Datasheet
HBC557_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC557, HBC557_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBC557-like datasheet